Technical parameters/frequency: 180 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1250 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 1.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX56,115
|
Nexperia | 类似代替 | SOT-89-3 |
Nexperia BCX56,115 , NPN 晶体管, 1 A, Vce=80 V, HFE:40, 3引脚 SOT-89封装
|
||
BCX56,115
|
NXP | 类似代替 | SOT-89-3 |
Nexperia BCX56,115 , NPN 晶体管, 1 A, Vce=80 V, HFE:40, 3引脚 SOT-89封装
|
||
BCX56,135
|
NXP | 类似代替 | SOT-89-3 |
TRANS NPN 80V 1A SOT89
|
||
BCX56-16,115
|
Nexperia | 类似代替 | SOT-89-3 |
NXP BCX56-16,115 单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE
|
||
BCX56-16,115
|
NXP | 类似代替 | SOT-89-3 |
NXP BCX56-16,115 单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 100 hFE
|
||
BCX56-16/T3
|
NXP | 完全替代 | SOT-89-3 |
Bipolar Transistors - BJT TRANS MED PWR TAPE13
|
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