Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/minimum current amplification factor (hFE): 25 @1A, 5V
Technical parameters/rated power (Max): 1.2 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5667
|
Microsemi | 完全替代 | TO-5 |
每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
|
||
JANS2N5667
|
Microsemi | 完全替代 | TO-5 |
NPN硅功率开关晶体管 NPN POWER SILICON SWITCHING TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review