Technical parameters/breakdown voltage (collector emitter): 140 V
Technical parameters/minimum current amplification factor (hFE): 50 @50mA, 10V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Raytheon | 功能相似 | 3 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
|
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
JAN2N3634
|
ON Semiconductor | 功能相似 | TO-39-3 |
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PIN
|
||
|
|
Raytheon | 功能相似 | 3 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
JANTX2N3634
|
Microsemi | 功能相似 | TO-39 |
PNP硅晶体管放大器 PNP SILICON AMPLIFIER TRANSISTOR
|
||
|
JANTXV2N3634
|
Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
|
||
|
JANTXV2N3634
|
ON Semiconductor | 功能相似 | TO-39-3 |
Small Signal Bipolar Transistor, 1-Element, PNP, Silicon, TO-39,
|
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