Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 80 @1A, 2V
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/Encapsulation: TO-111-4
External dimensions/packaging: TO-111-4
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3997
|
Solid State Devices | 功能相似 |
100V, 5A high speed NPN transistor
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JANTXV2N3997
|
Microsemi | 功能相似 | TO-111-4 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, Metal, 4Pin, TO-111/I, 4Pin
|
||
|
|
Solitron Devices | 功能相似 | TO-111 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1Element, NPN, Silicon, Metal, 4Pin, TO-111/I, 4Pin
|
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