Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 800mW (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 5.5A
Technical parameters/dissipated power (Max): 800mW (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: ULCC-18
External dimensions/packaging: ULCC-18
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFE230
|
Infineon | 功能相似 | LLCC |
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
|
||
JANTX2N6798U
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
|||
JANTX2N6798U
|
Microsemi | 功能相似 | ULCC-18 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
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