Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube, Rail
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2905AE3
|
Microsemi | 类似代替 | TO-39 |
Trans GP BJT PNP 60V 0.6A 800mW 3Pin TO-39
|
||
|
|
Semicoa Semiconductor | 类似代替 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JAN2N2905A
|
Microsemi | 类似代替 | TO-39-3 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JAN2N2905A
|
TI | 类似代替 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
JANTX2N2905A
|
Semicoa Semiconductor | 类似代替 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
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