Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 30 @250mA, 1V
Technical parameters/rated power (Max): 25 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-213
External dimensions/packaging: TO-213
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3740
|
ETC | 功能相似 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
|||
2N3740
|
Microsemi | 功能相似 | TO-66-2 |
Trans GP BJT PNP 60V 4A 3Pin(2+Tab) TO-66 Sleeve
|
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