Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 360 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 360 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3251A
|
Central Semiconductor | 功能相似 |
Small Signal Transistors TO-18 Case
|
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JAN2N3251A
|
Microsemi | 功能相似 | TO-205 |
TRANS PNP 60V 0.2A TO-39
|
||
JAN2N3251A
|
Motorola | 功能相似 |
TRANS PNP 60V 0.2A TO-39
|
|||
JANS2N2905
|
Microsemi | 功能相似 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
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