Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 40 @1A, 2V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 类似代替 | TO-5-3 |
3安培, 85V , NPN硅功率晶体管JAN , JTX , JTXV , JANS 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS
|
||
|
|
Microsemi | 类似代替 | TO-5 |
TO-39 NPN 60V 3A
|
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