Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/input capacitance: 30 pF
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: UB
External dimensions/packaging: UB
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Pack
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N2907AUB
|
Microsemi | 完全替代 | Surface Mount |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
||
JANTX2N2907AUB
|
Microsemi | 功能相似 | SMD-4 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
||
JANTX2N2907AUB
|
Semicoa Semiconductor | 功能相似 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
|||
JANTX2N2907AUB
|
ST Microelectronics | 功能相似 |
PNP小信号硅晶体管 PNP SMALL SIGNAL SILICON TRANSISTOR
|
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