Technical parameters/tolerances: ±2 %
Technical parameters/dissipated power: 500 mW
Technical parameters/test current: 7.5 mA
Technical parameters/voltage regulation value: 11.7 V
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-7
External dimensions/packaging: DO-7
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Central Semiconductor | 完全替代 | DO-7 |
11.7 VOLT温度补偿齐纳二极管基准二极管 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
1N944B
|
American Power Devices | 完全替代 | DO-35 |
11.7 VOLT温度补偿齐纳二极管基准二极管 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
||
|
|
Microsemi | 完全替代 | DO-7 |
11.7 VOLT温度补偿齐纳二极管基准二极管 11.7 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
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