Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 18 Ω
Technical parameters/polarity: N-Channel
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/breakdown voltage: 25 V
Technical parameters/rated power (Max): 310 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 135℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
J110
|
Central Semiconductor | 类似代替 | TO-226-3 |
JFET - 通用型N沟道 - 耗尽 JFET − General Purpose N−Channel − Depletion
|
||
|
|
ON Semiconductor | 完全替代 | TO-226-3 |
JFET - 通用型N沟道 - 耗尽 JFET − General Purpose N−Channel − Depletion
|
||
|
|
ON Semiconductor | 完全替代 | TO-92 |
JFET - 通用型N沟道 - 耗尽 JFET − General Purpose N−Channel − Depletion
|
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