Technical parameters/breakdown voltage (collector emitter): 650 V
Technical parameters/rated power (Max): 940 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 940000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXXK160N65C4
|
IXYS Semiconductor | 类似代替 | TO-264-3 |
IXXK 系列 GenX4 650 V 290 A 法兰安装 IGBT - TO-264
|
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