Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 42W (Tc)
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/Continuous drain current (Ids): 1A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 250pF @25V(Vds)
Technical parameters/descent time: 42 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTP1N80P
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
TO-220 N-CH 800V 1A
|
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