Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 16.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 5.5 V
Technical parameters/input capacitance: 2.25 nF
Technical parameters/gate charge: 43.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 25 ns
Technical parameters/reverse recovery time: 400 ns
Technical parameters/Input capacitance (Ciss): 2250pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Motor Drive&Control, Robotics, Power Management, Motor Drive&Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFA16N50P
|
IXYS Semiconductor | 完全替代 | TO-263-3 |
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 0.4 ohm, 10 V, 5.5 V
|
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