Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 7 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 230 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/Continuous drain current (Ids): 110A
Technical parameters/rise time: 30 ns
Technical parameters/Input capacitance (Ciss): 3080pF @25V(Vds)
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 230W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 9.9 mm
External dimensions/width: 9.2 mm
External dimensions/height: 4.5 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD90N06S3L-07
|
Infineon | 功能相似 | TO-252-3 |
的OptiMOS -T电源晶体管 OptiMOS-T Power-Transistor
|
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