Technical parameters/inductance: 1.2 µH
Technical parameters/inductance tolerance: ±10 %
Technical parameters/testing frequency: 7.96 MHz
Technical parameters/resistance (DC Max): 0.38 Ω
Encapsulation parameters/Encapsulation: 1812
External dimensions/packaging: 1812
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISC1812EB1R2K
|
Vishay Dale | 完全替代 | 1812 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
||
ISC1812EB1R2K
|
Vishay Semiconductor | 完全替代 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
|||
ISC1812EB1R2K
|
VISHAY | 完全替代 | 1812 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
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