Technical parameters/frequency: 166 MHz
Technical parameters/power supply current: 160 mA
Technical parameters/access time: 5.5 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 3V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 86
Encapsulation parameters/Encapsulation: TSOP-86
External dimensions/length: 22.42 mm
External dimensions/width: 10.29 mm
External dimensions/height: 1.05 mm
External dimensions/packaging: TSOP-86
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Not Recommended for New Design
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IS42S32200C1-7TL
|
Integrated Silicon Solution | 类似代替 | TSOP-86 |
IC SDRAM 64Mbit 143MHz 86TSOP
|
||
IS42S32200E-7TL
|
Integrated Silicon Solution | 类似代替 | TSOP-86 |
动态 RAM， ISSI **ISSI** **SDR SDRAM** 系列提供同步接口，具有可编程 CAS 等待时间（2/3 时钟）。 可使用管道流程实现高速数据传输，且同步 DRAM SDR 系列可提供脉冲读/写功能，且脉冲读/单写入使其特别适用于计算机应用。 **ISSI** SDR SDRAM 设备提供不同的组织和存储器大小系列，工作电源为 3.3V。 LVTTL 接口 有关输入/输出信号，请参考时钟输入的上升边缘 可编程脉冲序列：连续/交错；可编程脉冲长度 每个时钟周期的随机列地址 自刷新和自动刷新模式 ### 动态 RAM
|
||
IS42S32200E-7TL-TR
|
Integrated Silicon Solution | 完全替代 | TSOP-86 |
IC SDRAM 64Mbit 143MHz 86TSOP
|
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