Technical parameters/rated power: 1.25 W
Technical parameters/rise/fall time: 15 ns
Technical parameters/number of output interfaces: 1
Technical parameters/output voltage: 600 V
Technical parameters/output current: 4 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/dissipated power: 1250 mW
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS21851STRPBF
|
Infineon | 完全替代 | SOIC-8 |
INFINEON IRS21851STRPBF 芯片, MOSFET驱动器, 高压侧, SOIC-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review