Technical parameters/dissipated power: 3.7W (Ta), 43W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 400pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 60V 10A D2PAK
|
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IRLZ14STRRPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
IRLZ14STRRPBF
|
Vishay Semiconductor | 功能相似 | D2PAK |
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
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