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Description MOSFET N-CH 60V 10A D2PAK
Product QR code
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
6.79  yuan 6.79yuan
10+:
$ 8.1516
100+:
$ 7.7440
500+:
$ 7.4723
1000+:
$ 7.4587
2000+:
$ 7.4044
5000+:
$ 7.3364
7500+:
$ 7.2821
10000+:
$ 7.2549
Quantity
10+
100+
500+
1000+
2000+
Price
$8.1516
$7.7440
$7.4723
$7.4587
$7.4044
Price $ 8.1516 $ 7.7440 $ 7.4723 $ 7.4587 $ 7.4044
Start batch production 10+ 100+ 500+ 1000+ 2000+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3338) Minimum order quantity(10)
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Technical parameters/dissipated power: 3.7W (Ta), 43W (Tc)

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/Input capacitance (Ciss): 400pF @25V(Vds)

Technical parameters/dissipated power (Max): 3.7W (Ta), 43W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLZ14S IRLZ14S VISHAY 完全替代 D2PAK
MOSFET N-CH 60V 10A D2PAK
IRLZ14STRRPBF IRLZ14STRRPBF Vishay Siliconix 功能相似 TO-263-3
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
PDF
IRLZ14STRRPBF IRLZ14STRRPBF Vishay Semiconductor 功能相似 D2PAK
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
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