Technical parameters/drain source resistance: 100 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/Input capacitance (Ciss): 870pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.39 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRF | 功能相似 |
INTERNATIONAL RECTIFIER IRLU024NPBF 场效应管, N 通道, MOSFET, 55V, 17A, IPAK 新
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IRLU024ZPBF
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Infineon | 功能相似 | TO-251-3 |
Trans MOSFET N-CH 55V 16A 3Pin(3+Tab) IPAK
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IRLU024ZPBF
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International Rectifier | 功能相似 | TO-251 |
Trans MOSFET N-CH 55V 16A 3Pin(3+Tab) IPAK
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