Technical parameters/rated power: 130 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0065 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 130 W
Technical parameters/threshold voltage: 3 V
Technical parameters/input capacitance: 2900 pF
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 89A
Technical parameters/rise time: 150 ns
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/rated power (Max): 130 W
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 130W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRLR3705Z
|
International Rectifier | 类似代替 | TO-252-3 |
N 通道功率 MOSFET，Infineon Infineon 的全面 AECQ-101 汽车资格单芯片 N 通道设备组合可满足许多应用中的多种电源要求。 该分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRLR2905TRLPBF
|
International Rectifier | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
|
||
IRLR2905TRLPBF
|
Infineon | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
|
||
IRLR3705ZPBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRLR3705ZPBF. 晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
|
||
IRLR3705ZPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR3705ZPBF. 晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
|
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