Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 16 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/product series: IRLR3110Z
Technical parameters/threshold voltage: 2.5 V
Technical parameters/input capacitance: 3980pF @25V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 3980pF @25V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN025-100D,118
|
Nexperia | 功能相似 | TO-252-3 |
NXP PSMN025-100D,118 晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
|
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