Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6.8 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 143 W
Technical parameters/threshold voltage: 2.5 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 99A
Technical parameters/rise time: 216 ns
Technical parameters/Input capacitance (Ciss): 3779pF @50V(Vds)
Technical parameters/descent time: 69 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 143W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Battery Operated Drive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLR3636TRPBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRLR3636TRPBF 晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 2.5 V 新
|
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