Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 6.5A
Technical parameters/Input capacitance (Ciss): 1310pF @15V(Vds)
Technical parameters/dissipated power (Max): 2W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-6
External dimensions/packaging: SOT-23-6
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Load Switch, DC Switches
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLMS2002PBF
|
Infineon | 功能相似 | µSOIC |
INFINEON IRLMS2002PBF 晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
|
||
IRLMS2002PBF
|
International Rectifier | 功能相似 | SOIC |
INFINEON IRLMS2002PBF 晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
|
||
IRLMS2002TR
|
International Rectifier | 类似代替 | Micro-6 |
TSOP N-CH 20V 6.5A
|
||
IRLMS2002TRPBF
|
International Rectifier | 类似代替 | TSOP-6 |
INFINEON IRLMS2002TRPBF. 场效应管, MOSFET, N沟道, 2W, 6-TSOP
|
||
IRLMS2002TRPBF
|
Infineon | 类似代替 | SOT-23-6 |
INFINEON IRLMS2002TRPBF. 场效应管, MOSFET, N沟道, 2W, 6-TSOP
|
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