Technical parameters/threshold voltage: 1V ~ 2V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 |
MOSFET N-CH 100V 15A TO-220AB
|
|||
IRL530
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 100V 15A TO-220AB
|
||
IRL530
|
International Rectifier | 类似代替 |
MOSFET N-CH 100V 15A TO-220AB
|
|||
|
|
IFA | 功能相似 |
INTERNATIONAL RECTIFIER IRL530NPBF 场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB 新
|
|||
|
|
LiteOn | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 15A I(D), 100V, 0.16Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
||
IRL530PBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 15A I(D), 100V, 0.16Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
||
IRL530PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 15A I(D), 100V, 0.16Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
|
||
NTE2987
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2987 芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
|
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