Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/rated power (Max): 3.7 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ44SPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ44STRRPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ44STRRPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
SIHFZ44S-GE3
|
Vishay Semiconductor | 功能相似 | TO-263 |
SIHFZ44S-GE3 N-channel MOSFET Transistor, 50A, 60V, 2+Tab-Pin TO-263
|
||
SIHFZ44S-GE3
|
Vishay Siliconix | 功能相似 | D2PAK |
SIHFZ44S-GE3 N-channel MOSFET Transistor, 50A, 60V, 2+Tab-Pin TO-263
|
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