Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 49.0 A
Technical parameters/product series: IRFZ44NS
Technical parameters/input capacitance: 1.47 nF
Technical parameters/gate charge: 63.0 nC
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/Continuous drain current (Ids): 49.0 A
Technical parameters/rise time: 60.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ44SPBF
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
STB55NF06T4
|
ST Microelectronics | 功能相似 | TO-263-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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