Technical parameters/drain source resistance: 28 mΩ
Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/rise time: 110 ns
Technical parameters/Input capacitance (Ciss): 1900pF @25V(Vds)
Technical parameters/descent time: 92 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.7W (Ta), 150W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ44S
|
International Rectifier | 完全替代 |
MOSFET N-CH 60V 50A D2PAK
|
|||
IRFZ44S
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 60V 50A D2PAK
|
|||
IRFZ44S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ44SPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ44STRRPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 60V 50A D2PAK
|
||
IRFZ44STRRPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET N-CH 60V 50A D2PAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review