Technical parameters/number of channels: 1
Technical parameters/dissipated power: 40W (Tc)
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/Input capacitance (Ciss): 850pF @25V(Vds)
Technical parameters/dissipated power (Max): 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.7 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
New Jersey Semiconductor | 功能相似 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|||
IRFZ20
|
ST Microelectronics | 功能相似 | SFM |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
||
IRFZ20
|
Vishay Siliconix | 功能相似 | TO-220-3 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
||
IRFZ20
|
International Rectifier | 功能相似 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|||
IRFZ20
|
IRF | 功能相似 | TO-220-3 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
||
IRFZ20
|
VISHAY | 功能相似 | TO-220-3 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
||
IRFZ20
|
Vishay Semiconductor | 功能相似 |
15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
|||
IRFZ20PBF
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 50V 15A TO-220AB
|
||
|
|
LiteOn | 类似代替 | TO-220-3 |
MOSFET N-CH 50V 15A TO-220AB
|
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