Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/drain source voltage (Vds): -200 V
Technical parameters/Continuous drain current (Ids): -3.60 A
Technical parameters/rise time: 27 ns
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.39 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFU9220
|
VISHAY | 功能相似 | TO-251 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
||
IRFU9220
|
Vishay Siliconix | 功能相似 | TO-251-3 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
||
IRFU9220
|
Intersil | 功能相似 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
|||
IRFU9220
|
International Rectifier | 功能相似 |
3.6A , 200V , 1.500欧姆,P沟道功率MOSFET 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review