Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 38.0 A
Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.8 W
Technical parameters/product series: IRFS38N20D
Technical parameters/input capacitance: 2.90 nF
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 44.0 A
Technical parameters/Input capacitance (Ciss): 2900pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFS4127PBF
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IRFS4127PBF 晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
|
||
IRFS4127PBF
|
IFC | 类似代替 |
INFINEON IRFS4127PBF 晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
|
|||
|
IRFS4227PBF
|
IRF | 功能相似 |
INFINEON IRFS4227PBF 晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
|
|||
IRFS4227PBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRFS4227PBF 晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
|
||
STB40NF20
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB40NF20 晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
|
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