Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -9.90 A
Technical parameters/drain source voltage (Vds): 50.0 V
Technical parameters/Continuous drain current (Ids): 9.90 A
Technical parameters/rise time: 57.0 ns
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR), Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR9020
|
IRF | 完全替代 |
MOSFET P-CH 50V 9.9A DPAK
|
|||
|
|
Samsung | 完全替代 |
MOSFET P-CH 50V 9.9A DPAK
|
|||
|
|
Kersemi Electronic | 完全替代 |
MOSFET P-CH 50V 9.9A DPAK
|
|||
IRFR9020
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 50V 9.9A DPAK
|
||
IRFR9020
|
International Rectifier | 完全替代 | TO-252 |
MOSFET P-CH 50V 9.9A DPAK
|
||
|
|
LiteOn | 完全替代 | DPAK-3 |
MOSFET P-CH 50V 9.9A DPAK
|
||
IRFR9020PBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET P-CH 50V 9.9A DPAK
|
||
IRFR9020PBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET P-CH 50V 9.9A DPAK
|
||
IRFR9020TRL
|
VISHAY | 完全替代 | DPAK |
MOSFET P-CH 50V 9.9A DPAK
|
||
IRFR9020TRL
|
Vishay Semiconductor | 完全替代 |
MOSFET P-CH 50V 9.9A DPAK
|
|||
IRFR9020TRL
|
Kersemi Electronic | 完全替代 |
MOSFET P-CH 50V 9.9A DPAK
|
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