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Model IRFR224PBF
Description Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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Brand: International Rectifier
Packaging TO-252
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5264) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 250 V

Technical parameters/rated current: 3.80 A

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 42.0 W

Technical parameters/drain source voltage (Vds): 250 V

Technical parameters/leakage source breakdown voltage: 250 V

Technical parameters/Continuous drain current (Ids): 3.80 A

Technical parameters/rise time: 13.0 ns

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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