Technical parameters/dissipated power: 2.5W (Ta), 25W (Tc)
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR214PBF
|
LiteOn | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR214PBF
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR214PBF
|
Vishay Semiconductor | 功能相似 | TO-252 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR214PBF
|
International Rectifier | 功能相似 | TO-252 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR214TRLPBF
|
International Rectifier | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
||
IRFR214TRLPBF
|
Vishay Intertechnology | 功能相似 | TO-252 |
Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
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