Technical parameters/rated voltage (DC): 150 V
Technical parameters/rated current: 41.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200W (Tc)
Technical parameters/product series: IRFB41N15D
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/leakage source breakdown voltage: 150 V
Technical parameters/Continuous drain current (Ids): 41.0 A
Technical parameters/rise time: 63 ns
Technical parameters/Input capacitance (Ciss): 2520pF @25V(Vds)
Technical parameters/descent time: 14 ns
Technical parameters/dissipated power (Max): 200W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB41N15DPBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRFB41N15DPBF 晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
|
||
IRFB41N15DPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRFB41N15DPBF 晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
|
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