Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.8 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 6.50 A
Technical parameters/rise time: 27 ns
Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 24 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Design
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9630SPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
P 通道 MOSFET，100V 至 400V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
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