Technical parameters/drain source resistance: 300 mΩ
Technical parameters/dissipated power: 88 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 | 3 |
12A ， 100V ， 0.300欧姆，P沟道功率MOSFET 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
||
IRF9530
|
Intersil | 功能相似 |
12A ， 100V ， 0.300欧姆，P沟道功率MOSFET 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
|||
IRF9530
|
International Rectifier | 功能相似 |
12A ， 100V ， 0.300欧姆，P沟道功率MOSFET 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
|||
IRF9530
|
Infineon | 功能相似 |
12A ， 100V ， 0.300欧姆，P沟道功率MOSFET 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
|||
IRF9530PBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9530PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
||
IRF9530PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 12A I(D), 100V, 0.3Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
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