Technical parameters/drain source resistance: 3.8 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7832Z
Technical parameters/threshold voltage: 2.35 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 21.0 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
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