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Model IRF7832ZPBF
Description INFINEON IRF7832ZPBF Transistor, MOSFET, N-channel, 21 A, 30 V, 3.8 Mohm, 10 V, 2.35 V
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Brand: Infineon
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2094) Minimum order quantity(1)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0038 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/product series: IRF7832Z

Technical parameters/threshold voltage: 2.35 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 21.0 A

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 3860pF @15V(Vds)

Technical parameters/descent time: 5.6 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Other/Product Lifecycle: End of Life

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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