Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 10.0 A
Technical parameters/drain source resistance: 550 mΩ (max)
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400V (min)
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 1030pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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LiteOn | 完全替代 |
MOSFET N-CH 400V 10A TO-220AB
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International Rectifier | 完全替代 |
MOSFET N-CH 400V 10A TO-220AB
|
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IRF740APBF
|
VISHAY | 完全替代 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
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IRF740APBF
|
Vishay Intertechnology | 完全替代 | TO-220 |
MOSFET N-CH 400V 10A TO-220AB
|
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IRF740APBF
|
IRF | 完全替代 |
MOSFET N-CH 400V 10A TO-220AB
|
|||
|
|
Vishay Siliconix | 功能相似 | TO-220 |
TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power
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