Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 5.5A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF730STRL
|
Vishay Semiconductor | 完全替代 | 3 |
MOSFET N-CH 400V 5.5A D2PAK
|
||
IRF730STRL
|
International Rectifier | 完全替代 | SOIC |
MOSFET N-CH 400V 5.5A D2PAK
|
||
IRF730STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 400V 5.5A D2PAK
|
||
IRF730STRL
|
VISHAY | 完全替代 | TO-263 |
MOSFET N-CH 400V 5.5A D2PAK
|
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