Technical parameters/rated power: 89 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 W
Technical parameters/input capacitance: 3890 pF
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Continuous drain current (Ids): 29A
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 3890pF @13V(Vds)
Technical parameters/descent time: 9.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: MultiPhase SyncFET
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6714MTR1PBF
|
International Rectifier | 功能相似 | DirectFET™ Isometric MX |
Direct-FET N-CH 25V 29A
|
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