Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 24.0 A
Technical parameters/rated power: 89 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 89 W
Technical parameters/product series: IRF6612
Technical parameters/input capacitance: 3.97 nF
Technical parameters/gate charge: 45.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 19.0 A
Technical parameters/Input capacitance (Ciss): 3970pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: DirectFET-MX
External dimensions/length: 6.35 mm
External dimensions/width: 5.05 mm
External dimensions/height: 0.7 mm
External dimensions/packaging: DirectFET-MX
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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