Technical parameters/number of channels: 1
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 110 W
Technical parameters/drain source voltage (Vds): 150 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 36 ns
Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/rated power (Max): 3.8 W
Technical parameters/descent time: 37 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.8W (Ta), 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRF6215STRL
|
International Rectifier | 类似代替 | D2PAK |
功率场效应管, MOSFET, P沟道, 150 V, 9 A, 0.29 ohm, TO-252 (DPAK), 表面安装
|
||
IRF6215SPBF
|
Infineon | 完全替代 | TO-263-3 |
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) ### MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRF6215STRLPBF
|
International Rectifier | 类似代替 | TO-263-3 |
INFINEON IRF6215STRLPBF 场效应管, MOSFET
|
||
IRF6215STRLPBF
|
Infineon | 类似代替 | TO-263-3 |
INFINEON IRF6215STRLPBF 场效应管, MOSFET
|
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