Technical parameters/drain source resistance: 1.1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 4.40 A
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.41 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD6N25TF
|
ON Semiconductor | 功能相似 | TO-252-3 |
MOSFET N-CH 250V 4.4A DPAK
|
||
IRF624S
|
VISHAY | 类似代替 | TO-263 |
MOSFET N-CH 250V 4.4A D2PAK
|
||
IRF624S
|
International Rectifier | 类似代替 |
MOSFET N-CH 250V 4.4A D2PAK
|
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