Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -2.90 A
Technical parameters/polarity: P-CH
Technical parameters/product series: IRF5810
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 2.90 A
Technical parameters/rise time: 14 ns
Technical parameters/Input capacitance (Ciss): 650pF @16V(Vds)
Technical parameters/rated power (Max): 960 mW
Technical parameters/descent time: 53 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 960 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/packaging: TSOT-23-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
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