Technical parameters/drain source resistance: 52.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 107 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 25.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 28.0 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 1710pF @25V(Vds)
Technical parameters/rated power (Max): 107 W
Technical parameters/descent time: 56 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 107W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
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|---|---|---|---|---|---|---|
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|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP24NF10 晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
|
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