Technical parameters/power supply voltage (DC): 10.0V (min)
Technical parameters/working voltage: 10V ~ 20V
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: 620 V
Technical parameters/output current: 1.9 A
Technical parameters/dissipated power: 1 W
Technical parameters/product series: IR21814
Technical parameters/rise time: 60ns (Max)
Technical parameters/descent time: 35ns (Max)
Technical parameters/descent time (Max): 35 ns
Technical parameters/rise time (Max): 60 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 10V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: SOIC-14
External dimensions/length: 8.74 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-14
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRF | 功能相似 |
600V High and Low Side Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
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IR21814STRPBF
|
Infineon | 完全替代 | SOIC-14 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
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