Technical parameters/rated power: 1.25 W
Technical parameters/number of output interfaces: 1
Technical parameters/Input voltage (DC): 5.50 V
Technical parameters/output current: 5 A
Technical parameters/power supply current: 2.5 mA
Technical parameters/drain source resistance: 110 mΩ
Technical parameters/input current: 80 μA
Technical parameters/dissipated power: 1.25 W
Technical parameters/product series: IPS7071GPBF
Technical parameters/rise time: 7 μs
Technical parameters/thermal resistance: 100℃/W (RθJA)
Technical parameters/clamp voltage: 70 V
Technical parameters/output current (Max): 1.5 A
Technical parameters/descent time: 6 μs
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1250 mW
Technical parameters/power supply voltage: 65 V
Technical parameters/input voltage: 5.5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPS7071GTRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
||
IPS7071GTRPBF
|
Infineon | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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